Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Diotec Semiconductor | 功能相似 | SOT-23-3(TO-236) |
N沟道 60V 280A
|
||
2N7002
|
UTC | 功能相似 | SOT-23-3 |
N沟道 60V 280A
|
||
2N7002
|
ZSKY | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
|
|
KUU | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002
|
Major Brands | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002
|
Secos | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002
|
Calogic | 功能相似 |
N沟道 60V 280A
|
|||
2N7002
|
Fairchild | 功能相似 | SOT-23-3 |
N沟道 60V 280A
|
||
2N7002
|
ON Semiconductor | 功能相似 | SOT-23-3 |
N沟道 60V 280A
|
||
2N7002
|
NTE Electronics | 功能相似 |
N沟道 60V 280A
|
|||
2N7002
|
Supertex | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002
|
Nexperia | 功能相似 | SOT-23-3 |
N沟道 60V 280A
|
||
2N7002
|
Central Semiconductor | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002
|
Kexin | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002
|
Vishay Siliconix | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002
|
Taitron | 功能相似 |
N沟道 60V 280A
|
|||
2N7002
|
ST Microelectronics | 功能相似 | SOT-23-3 |
N沟道 60V 280A
|
||
2N7002
|
Chenmko | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002
|
TI | 功能相似 |
N沟道 60V 280A
|
|||
2N7002
|
VISHAY | 功能相似 | SOT-23 |
N沟道 60V 280A
|
||
2N7002K-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23-3 |
MOSFET 60V 300mA 0.35W 2Ω @ 10V
|
||
2N7002K-T1-GE3
|
Vishay Intertechnology | 类似代替 |
MOSFET 60V 300mA 0.35W 2Ω @ 10V
|
|||
|
|
IFA | 功能相似 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
|
|||
IRLML0030TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
|
||
SI2304DDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
VISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
|
||
SI2304DDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
VISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
|
||
SI2304DDS-T1-GE3
|
Vishay Semiconductor | 类似代替 | TO-236 |
VISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
|
||
SI2304DDS-T1-GE3
|
Vishay Intertechnology | 类似代替 | TO-236 |
VISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
|
||
SI2306BDS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-GE3 场效应管, MOSFET, N沟道, 30V, 4A, TO-236
|
||
SI2306BDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-GE3 场效应管, MOSFET, N沟道, 30V, 4A, TO-236
|
||
SI2306BDS-T1-GE3
|
Vishay Intertechnology | 类似代替 | TO-236-3 |
VISHAY SI2306BDS-T1-GE3 场效应管, MOSFET, N沟道, 30V, 4A, TO-236
|
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