Technical parameters/drain source resistance: | 65 mΩ |
|
Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 3.16A |
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Technical parameters/rise time: | 12 ns |
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Technical parameters/Input capacitance (Ciss): | 305pF @15V(Vds) |
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Technical parameters/rated power (Max): | 750 mW |
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Technical parameters/descent time: | 6 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 3000 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002ET1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002ET1G 晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
|
||
AO3418
|
ETC | 功能相似 | SOT-23-3 |
30V,3.8A,N沟道MOSFET
|
||
AO3418
|
Alpha | 功能相似 |
30V,3.8A,N沟道MOSFET
|
|||
BSS123-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
||
RTR040N03TL
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
ROHM RTR040N03TL 晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
|
||
ZXMN3F30FHTA
|
Diodes Zetex | 功能相似 | SOT-23 |
ZXMN3F30 系列 30 V 0.047 Ohm N 沟道 增强模式 MOSFET - SOT-23
|
||
ZXMN3F30FHTA
|
Diodes | 功能相似 | SOT-23-3 |
ZXMN3F30 系列 30 V 0.047 Ohm N 沟道 增强模式 MOSFET - SOT-23
|
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