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Model ZXMN3F30FHTA

Description ZXMN3F30 系列 30 V 0.047 Ohm N 沟道增强模式 MOSFET - SOT-23

Brand: Diodes

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.047 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	1.4 W
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	4.60 A
Technical parameters/rise time:	2.6 ns
Technical parameters/Input capacitance (Ciss):	318pF @15V(Vds)
Technical parameters/rated power (Max):	950 mW
Technical parameters/descent time:	9.3 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	950mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power management, motor drive and control
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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