Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 750mW (Ta)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 4.00 A
Technical parameters/Input capacitance (Ciss): 305pF @15V(Vds)
Technical parameters/dissipated power (Max): 750mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002ET1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR 2N7002ET1G 晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
|
||
AO3418
|
ETC | 功能相似 | SOT-23-3 |
30V,3.8A,N沟道MOSFET
|
||
AO3418
|
Alpha | 功能相似 |
30V,3.8A,N沟道MOSFET
|
|||
BSS123-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
||
RTR040N03TL
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
ROHM RTR040N03TL 晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
|
||
ZXMN3F30FHTA
|
Diodes Zetex | 功能相似 | SOT-23 |
ZXMN3F30 系列 30 V 0.047 Ohm N 沟道 增强模式 MOSFET - SOT-23
|
||
ZXMN3F30FHTA
|
Diodes | 功能相似 | SOT-23-3 |
ZXMN3F30 系列 30 V 0.047 Ohm N 沟道 增强模式 MOSFET - SOT-23
|
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