Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.066 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 4.00 A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 475pF @10V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.60 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDN335N
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN335N 晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
|
||
FDN335N
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN335N 晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
|
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