Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.07 Ω
Technical parameters/dissipated power: 0.5 W
Technical parameters/threshold voltage: 900 mV
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 8.5 ns
Technical parameters/Input capacitance (Ciss): 310pF @10V(Vds)
Technical parameters/rated power (Max): 460 mW
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.4 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6244TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML6244TRPBF 晶体管, MOSFET, N沟道, 6.3 A, 20 V, 21 mohm, 4.5 V, 0.9 V
|
||
IRLML6244TRPBF
|
Infineon | 功能相似 | SOT-23-3 |
INFINEON IRLML6244TRPBF 晶体管, MOSFET, N沟道, 6.3 A, 20 V, 21 mohm, 4.5 V, 0.9 V
|
||
MGSF2N02ELT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MGSF2N02ELT1G 晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
|
||
RTR040N03TL
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
ROHM RTR040N03TL 晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
|
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