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Model MGSF2N02ELT1G
Description ON SEMICONDUCTOR MGSF2N02ELT1G 晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.078 ohm, 4.5 V, 1 V
Product QR code
Brand: ON Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.85  yuan 0.85yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9153) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

20.0 V

 

Technical parameters/rated current:

2.80 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.078 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.25 W

 

Technical parameters/threshold voltage:

1 V

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20.0 V

 

Technical parameters/breakdown voltage of gate source:

±8.00 V

 

Technical parameters/Continuous drain current (Ids):

2.80 A

 

Technical parameters/rise time:

95 ns

 

Technical parameters/Input capacitance (Ciss):

150pF @5V(Vds)

 

Technical parameters/rated power (Max):

1.25 W

 

Technical parameters/descent time:

125 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.25W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

SOT-23-3

 

Dimensions/Length:

3.04 mm

 

Dimensions/Width:

1.3 mm

 

Dimensions/Height:

1.01 mm

 

Dimensions/Packaging:

SOT-23-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Oth

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