Encapsulation parameters/Encapsulation: TO-236
External dimensions/packaging: TO-236
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFET Small Signal
Other/RoHS: Non-Compliant
Other/궟동: Single
Other/Soft 랜イ동터극동: N-Channel
Other/저항 Drain Source RDS (on): 0.049 Ohms
Other/Gate Charge Qg: 4.5 nC
Other/ハ레イ?동항복압: 30 V
Other/Link Files 레イ류: 3.6 A
Other/력발산: 1.7 W
Other/동착 동: SMD/SMT
Other/Case/Package: TO-236
Other/ị동: Reel
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN3115UDMQ-7
|
Diodes | 功能相似 | DFN |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
||
|
|
IFA | 功能相似 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
|
|||
IRLML0030TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML0030TRPBF 晶体管, MOSFET, N沟道, 5.3 A, 30 V, 0.022 ohm, 10 V, 1.7 V
|
||
MGSF1N03LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MGSF1N03LT1G 晶体管, MOSFET, N沟道, 1.6 A, 30 V, 100 mohm, 10 V, 1.7 V
|
||
SI2306BDS-T1-E3
|
VISHAY | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
|
||
SI2306BDS-T1-E3
|
Vishay Intertechnology | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
|
||
SI2306BDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
|
||
SI2306BDS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
|
||
TN0201K-T1-E3
|
Vishay Semiconductor | 功能相似 | SOT-23 |
VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
|
||
TN0201K-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
|
||
TN0201K-T1-E3
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
|
||
|
UT2306G-AE2-R
|
UTC | 功能相似 |
N-CHANNEL ENHANCEMENT MODE
|
|||
|
UT2306G-AE3-R
|
UTC | 功能相似 | SOT-23 |
MOS场效应管 UT2306G SOT-23 N沟道,30V,3.5A,65mΩ@10V
|
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