Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 420 mA
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BS170
|
GE | 功能相似 |
小信号N沟道TO-92-3封装场效应管
|
|||
BS170
|
ON Semiconductor | 功能相似 | TO-226-3 |
小信号N沟道TO-92-3封装场效应管
|
||
BS170
|
Major Brands | 功能相似 | TO-92 |
小信号N沟道TO-92-3封装场效应管
|
||
SI2304DDS-T1-GE3
|
VISHAY | 功能相似 | SOT-23-3 |
VISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
|
||
SI2304DDS-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
|
||
SI2304DDS-T1-GE3
|
Vishay Semiconductor | 功能相似 | TO-236 |
VISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
|
||
SI2304DDS-T1-GE3
|
Vishay Intertechnology | 功能相似 | TO-236 |
VISHAY SI2304DDS-T1-GE3 晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
|
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