Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 500 mA
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/threshold voltage: 2.1 V
Technical parameters/input capacitance: 60.0 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 500 mA
Technical parameters/Input capacitance (Ciss): 60pF @10V(Vds)
Technical parameters/rated power (Max): 830 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Audio, signal processing
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BS170G
|
Motorola | 类似代替 |
ON SEMICONDUCTOR BS170G 晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2 V
|
|||
BS170RLRAG
|
ON Semiconductor | 类似代替 | TO-92-3 |
ON SEMICONDUCTOR BS170RLRAG 场效应管, MOSFET, N沟道, 0.350W, TO-92
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review