Technical parameters/drain source resistance: 0.049 Ω
Technical parameters/dissipated power: 1.1 W
Technical parameters/threshold voltage: 2.2 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 235pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.1W (Ta), 1.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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IRLML0030TRPBF
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International Rectifier | 功能相似 | SOT-23-3 |
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SI2306BDS-T1-E3
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SI2306BDS-T1-E3
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Vishay Intertechnology | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
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SI2306BDS-T1-E3
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Vishay Siliconix | 类似代替 | SOT-23-3 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
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SI2306BDS-T1-E3
|
Vishay Semiconductor | 类似代替 | TO-236 |
VISHAY SI2306BDS-T1-E3 晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
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TN0201K-T1-E3
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VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
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TN0201K-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
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TN0201K-T1-E3
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
VISHAY TN0201K-T1-E3 晶体管, MOSFET, N沟道, 420 mA, 20 V, 800 mohm, 4.5 V, 2 V
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UT2306G-AE2-R
|
UTC | 功能相似 |
N-CHANNEL ENHANCEMENT MODE
|
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UT2306G-AE3-R
|
UTC | 功能相似 | SOT-23 |
MOS场效应管 UT2306G SOT-23 N沟道,30V,3.5A,65mΩ@10V
|
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