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Model 2N7002K-T1-GE3

Description VISHAY 2N7002K-T1-GE3 晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2 V

Brand: Vishay Semiconductor

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	2 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	350 mW
Technical parameters/threshold voltage:	1 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	190 mA
Technical parameters/Input capacitance (Ciss):	30pF @25V(Vds)
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	0.35 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Length:	3.04 mm
Dimensions/Width:	1.4 mm
Dimensions/Height:	1.02 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Portable Devices, Industrial, Signal Processing, Communications & Networking, Lighting, Imaging, Video & Vision
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Customs information/ECCN code:	EAR99

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	2N7002KT1G	Vishay Semiconductor	功能相似	SOT-23-3	ON SEMICONDUCTOR 2N7002KT1G. 场效应管, MOSFET, N沟道, 60V, 380mA SOT-23	PDF
	2N7002WT1G	ON Semiconductor	功能相似	SC-70-3	ON SEMICONDUCTOR 2N7002WT1G. 场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷	PDF