Technical parameters/Input capacitance (Ciss): 1847pF @50V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 74 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-669
External dimensions/length: 5 mm
External dimensions/width: 4.1 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SOT-669
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PH1955L,115
|
NXP | 功能相似 | SOT-669 |
LFPAK N-CH 55V 40A
|
||
PH20100S,115
|
NXP | 类似代替 | SOT-669 |
PH20100S - N沟道TrenchMOS标准电平FET
|
||
PH20100S,115
|
Nexperia | 类似代替 | Power-SO8 |
PH20100S - N沟道TrenchMOS标准电平FET
|
||
PSMN017-60YS
|
Nexperia | 功能相似 | SOT-669 |
NXP PSMN017-60YS 晶体管, MOSFET, N沟道, 44 A, 60 V, 12.3 mohm, 10 V, 3 V
|
||
PSMN020-100YS
|
NXP | 类似代替 | SOT-669 |
NXP PSMN020-100YS 晶体管, MOSFET, N沟道, 43 A, 100 V, 15 mohm, 10 V, 3 V
|
||
PSMN8R5-60YS
|
NXP | 类似代替 | SOT-669 |
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
|
||
PSMN8R5-60YS
|
Nexperia | 类似代替 | SOT-669 |
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
|
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