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Model PSMN8R5-60YS
Description Power Field-Effect Transistor
Product QR code
Brand: Nexperia
Packaging SOT-669
Delivery time
Packaging method
Standard packaging quantity 1
3.53  yuan 3.53yuan
5+:
$ 4.7682
25+:
$ 4.4150
50+:
$ 4.1678
100+:
$ 4.0618
500+:
$ 3.9912
2500+:
$ 3.9029
5000+:
$ 3.8675
10000+:
$ 3.8146
Quantity
5+
25+
50+
100+
500+
Price
$4.7682
$4.4150
$4.1678
$4.0618
$3.9912
Price $ 4.7682 $ 4.4150 $ 4.1678 $ 4.0618 $ 3.9912
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5989) Minimum order quantity(5)
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Technical parameters/drain source resistance: 5.6 mΩ

Technical parameters/dissipated power: 106 W

Technical parameters/threshold voltage: 3 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-669

External dimensions/packaging: SOT-669

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standard/REACH SVHC version: 2014/12/17

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Alternative material

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PSMN3R3-40YS PSMN3R3-40YS Nexperia 类似代替 SOT-669
NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
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PSMN3R3-40YS PSMN3R3-40YS NXP 类似代替 SOT-669
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