Technical parameters/number of pins: | 4 |
|
Technical parameters/drain source resistance: | 2.6 mΩ |
|
Technical parameters/dissipated power: | 117 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/Input capacitance (Ciss): | 2754pF @20V(Vds) |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 117 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-669 |
|
Dimensions/Length: | 5 mm |
|
Dimensions/Width: | 4.1 mm |
|
Dimensions/Height: | 1.1 mm |
|
Dimensions/Packaging: | SOT-669 |
|
Other/Product Lifecycle: | Active |
|
Other/Manufacturing Applications: | Power Management, Communications & Networking, Consumer Electronics, Motor Drive & Control, Industrial |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PH20100S,115
|
NXP | 类似代替 | SOT-669 |
PH20100S - N沟道TrenchMOS标准电平FET
|
||
PH20100S,115
|
Nexperia | 类似代替 | Power-SO8 |
PH20100S - N沟道TrenchMOS标准电平FET
|
||
PSMN017-60YS
|
Nexperia | 功能相似 | SOT-669 |
NXP PSMN017-60YS 晶体管, MOSFET, N沟道, 44 A, 60 V, 12.3 mohm, 10 V, 3 V
|
||
PSMN020-100YS
|
NXP | 类似代替 | SOT-669 |
NXP PSMN020-100YS 晶体管, MOSFET, N沟道, 43 A, 100 V, 15 mohm, 10 V, 3 V
|
||
PSMN8R5-60YS
|
NXP | 类似代替 | SOT-669 |
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
|
||
PSMN8R5-60YS
|
Nexperia | 类似代替 | SOT-669 |
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
|
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