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Model PSMN020-100YS

Description NXP PSMN020-100YS 晶体管, MOSFET, N沟道, 43 A, 100 V, 15 mohm, 10 V, 3 V

Brand: NXP

Packaging SOT-669

Delivery time

Packaging method

Standard packaging quantity 1

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Technical parameters/number of pins:	4
Technical parameters/drain source resistance:	0.015 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	106 W
Technical parameters/threshold voltage:	3 V
Technical parameters/drain source voltage (Vds):	100 V
Technical parameters/Continuous drain current (Ids):	43A
Technical parameters/Input capacitance (Ciss):	2210pF @50V(Vds)
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	106 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	SOT-669
Dimensions/Length:	5 mm
Dimensions/Width:	4.1 mm
Dimensions/Height:	1.1 mm
Dimensions/Packaging:	SOT-669
Other/Product Lifecycle:	Unknown
Other/Manufacturing Applications:	Power Management, Consumer Electronics, Industrial, Communications & Networking, Motor Drive & Control
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs Information/Hong Kong Import and Export License:	NLR

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