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Model PSMN8R5-60YS
Description NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
Product QR code
Brand: NXP
Packaging SOT-669
Delivery time
Packaging method
Standard packaging quantity 1
3.68  yuan 3.68yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4805) Minimum order quantity(1)
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Technical parameters/number of pins:

4

 

Technical parameters/drain source resistance:

5.6 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

106 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Continuous drain current (Ids):

76A

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-669

 

Dimensions/Packaging:

SOT-669

 

Physical parameters/operating temperature:

-55℃ ~ 175℃

 

Other/Product Lifecycle:

Unknown

 

Other/Manufacturing Applications:

Power Management, Motor Drive&Control, Motor Drive& Control

 

Compliant with standards/RoHS standards:

Exempt

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
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PSMN3R3-40YS PSMN3R3-40YS NXP 类似代替 SOT-669
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