Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 23 mΩ |
|
Technical parameters/dissipated power: | 62.5 W |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Leakage source breakdown voltage: | 100 V |
|
Technical parameters/rise time: | 15 ns |
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Technical parameters/Input capacitance (Ciss): | 2264pF @25V(Vds) |
|
Technical parameters/descent time: | 9.3 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Technical parameters/dissipated power (Max): | 62.5W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 5 |
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Encapsulation parameters/Encapsulation: | Power-SO8 |
|
Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4.1 mm |
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Dimensions/Height: | 1.1 mm |
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Dimensions/Packaging: | Power-SO8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Discontinued at Digi-Key |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN017-60YS
|
Nexperia | 类似代替 | SOT-669 |
NXP PSMN017-60YS 晶体管, MOSFET, N沟道, 44 A, 60 V, 12.3 mohm, 10 V, 3 V
|
||
PSMN3R3-40YS
|
Nexperia | 类似代替 | SOT-669 |
NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
|
||
PSMN3R3-40YS
|
NXP | 类似代替 | SOT-669 |
NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
|
||
PSMN8R5-60YS
|
NXP | 类似代替 | SOT-669 |
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
|
||
PSMN8R5-60YS
|
Nexperia | 类似代替 | SOT-669 |
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
|
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