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Model PH20100S,115
Description PH20100S - N沟道TrenchMOS标准电平FET
Product QR code
Brand: NXP
Packaging SOT-669
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.95  yuan 7.95yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8381) Minimum order quantity(1)
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Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

62.5 W

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Continuous drain current (Ids):

34.3 A

 

Technical parameters/Input capacitance (Ciss):

2264pF @25V(Vds)

 

Technical parameters/rated power (Max):

62.5 W

 

Technical parameters/dissipated power (Max):

62.5W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-669

 

Dimensions/Packaging:

SOT-669

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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PSMN3R3-40YS PSMN3R3-40YS Nexperia 类似代替 SOT-669
NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
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PSMN3R3-40YS PSMN3R3-40YS NXP 类似代替 SOT-669
NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
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PSMN8R5-60YS PSMN8R5-60YS NXP 类似代替 SOT-669
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
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PSMN8R5-60YS PSMN8R5-60YS Nexperia 类似代替 SOT-669
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V

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