Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 75 W |
|
Technical parameters/drain source voltage (Vds): | 55 V |
|
Technical parameters/Continuous drain current (Ids): | 40.0 A |
|
Technical parameters/rise time: | 180 ns |
|
Technical parameters/Input capacitance (Ciss): | 1992pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 75 W |
|
Technical parameters/descent time: | 134 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 75W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 5 |
|
Encapsulation parameters/Encapsulation: | SOT-669 |
|
Dimensions/Packaging: | SOT-669 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN017-60YS
|
Nexperia | 功能相似 | SOT-669 |
NXP PSMN017-60YS 晶体管, MOSFET, N沟道, 44 A, 60 V, 12.3 mohm, 10 V, 3 V
|
||
PSMN3R3-40YS
|
Nexperia | 功能相似 | SOT-669 |
NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
|
||
PSMN3R3-40YS
|
NXP | 功能相似 | SOT-669 |
NXP PSMN3R3-40YS 晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
|
||
PSMN8R5-60YS
|
NXP | 功能相似 | SOT-669 |
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
|
||
PSMN8R5-60YS
|
Nexperia | 功能相似 | SOT-669 |
NXP PSMN8R5-60YS 晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
|
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