Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -1.00 A
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.30 W
Technical parameters/drain source voltage (Vds): -100 V
Technical parameters/leakage source breakdown voltage: -100 V
Technical parameters/Continuous drain current (Ids): -1.00 A
Technical parameters/rise time: 29.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: HVMDIP-4
External dimensions/packaging: HVMDIP-4
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9120
|
VISHAY | 类似代替 | DIP-4 |
P沟道 100V 1A
|
||
IRFD9120
|
Vishay Semiconductor | 类似代替 |
P沟道 100V 1A
|
|||
IRFD9120
|
Vishay Siliconix | 类似代替 | DIP-4 |
P沟道 100V 1A
|
||
IRFD9120
|
International Rectifier | 类似代替 | HVMDIP-4 |
P沟道 100V 1A
|
||
IRFD9120PBF
|
Infineon | 类似代替 | DIP |
MOSFET P-CH 100V 1A 4-DIP
|
||
|
|
LiteOn | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Precision Group | 类似代替 | Through Hole |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Semiconductor | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
International Rectifier | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
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