Encapsulation parameters/Encapsulation: | DIP-4 |
|
Dimensions/Packaging: | DIP-4 |
|
Other/FET types: | P-Channel |
|
Other/Vgs (maximum value): | ±20V |
|
Other/Rds On (Max) @ Id, Vgs: | 600 mOhms @ 600mA,10V |
|
Other/continuous drain current Id: | 1A(Ta) |
|
Other/drain source voltage Vds: | 100V |
|
Other/Operating Temperature: | -55℃~175℃ |
|
Other/Packaging/Shell: | 4-DIP |
|
Other/Vgs (th): | 4V @ 250uA |
|
Other/Pd - power dissipation (Max): | 1.3W |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9120
|
VISHAY | 类似代替 | DIP-4 |
P沟道 100V 1A
|
||
IRFD9120
|
Vishay Semiconductor | 类似代替 |
P沟道 100V 1A
|
|||
IRFD9120
|
Vishay Siliconix | 类似代替 | DIP-4 |
P沟道 100V 1A
|
||
IRFD9120
|
International Rectifier | 类似代替 | HVMDIP-4 |
P沟道 100V 1A
|
||
IRFD9120PBF
|
Infineon | 类似代替 | DIP |
MOSFET P-CH 100V 1A 4-DIP
|
||
|
|
LiteOn | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Precision Group | 类似代替 | Through Hole |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Semiconductor | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
International Rectifier | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
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