Technical parameters/drain source resistance: | 0.6 Ω |
|
Technical parameters/dissipated power: | 1.3 W |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 4 |
|
Dimensions/Length: | 6.29 mm |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9120
|
VISHAY | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 100V 1A 4-DIP
|
|||
IRFD9120
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120
|
International Rectifier | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9123PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A HEXDIP
|
||
IRFD9123PBF
|
VISHAY | 类似代替 |
MOSFET P-CH 100V 1A HEXDIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review