Technical parameters/dissipated power: -
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 390pF @25V(Vds)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9120PBF
|
Infineon | 类似代替 | DIP |
MOSFET P-CH 100V 1A 4-DIP
|
||
|
|
LiteOn | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Precision Group | 类似代替 | Through Hole |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Semiconductor | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120PBF
|
International Rectifier | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
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