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Model IRFD9120PBF
Description VISHAY IRFD9120PBF. Transistor, MOSFET, P-channel, 1A, -100 V, 600 Mohm, -10 V, -4 V
Product QR code
Brand: Vishay Semiconductor
Packaging DIP-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.98  yuan 1.98yuan
5+:
$ 2.6676
25+:
$ 2.4700
50+:
$ 2.3317
100+:
$ 2.2724
500+:
$ 2.2329
2500+:
$ 2.1835
5000+:
$ 2.1637
10000+:
$ 2.1341
Quantity
5+
25+
50+
100+
500+
Price
$2.6676
$2.4700
$2.3317
$2.2724
$2.2329
Price $ 2.6676 $ 2.4700 $ 2.3317 $ 2.2724 $ 2.2329
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2820) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): -100 V

Technical parameters/rated current: -1.00 A

Technical parameters/number of pins: 4

Technical parameters/drain source resistance: 0.6 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 1.3 W

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: -100 V

Technical parameters/Continuous drain current (Ids): -1.00 A

Technical parameters/rise time: 29 ns

Technical parameters/Input capacitance (Ciss): 390pF @25V(Vds)

Technical parameters/descent time: 25 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1.3 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: DIP-4

External dimensions/length: 6.29 mm

External dimensions/width: 6.29 mm

External dimensions/height: 3.37 mm

External dimensions/packaging: DIP-4

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Packaging Methods: Tube

Other/Manufacturing Applications: Power Management

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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