Technical parameters/drain source voltage (Vds): 100 V
Encapsulation parameters/Encapsulation: HVMDIP-4
External dimensions/packaging: HVMDIP-4
Other/Product Catalog: MOS(Field Effect Transistor
Other/leakage source voltage (Vdss): 100V
Other/continuous drain current (Id) (at 25 ° C): 1A
Other/gate source threshold voltage: 4V @ 250uA
Other/leakage source conduction resistance: 600mΩ @ 600mA,10V
Other/maximum power dissipation (Ta=25 ° C): 1.3W
Other/Type: Pchannel
Other/Product Code: C32871
Other/Packaging Specifications: HEXDIP
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9120
|
VISHAY | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 100V 1A 4-DIP
|
|||
IRFD9120
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120
|
International Rectifier | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9123PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A HEXDIP
|
||
IRFD9123PBF
|
VISHAY | 类似代替 |
MOSFET P-CH 100V 1A HEXDIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review