Technical parameters/dissipated power: 1300 mW
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 29 ns
Technical parameters/Input capacitance (Ciss): 390pF @25V(Vds)
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1.3W (Ta)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/length: 6.29 mm
External dimensions/width: 5 mm
External dimensions/height: 3.37 mm
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9120
|
VISHAY | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 100V 1A 4-DIP
|
|||
IRFD9120
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120
|
International Rectifier | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9123PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A HEXDIP
|
||
IRFD9123PBF
|
VISHAY | 类似代替 |
MOSFET P-CH 100V 1A HEXDIP
|
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