Technical parameters/rated voltage (DC): | -100 V |
|
Technical parameters/rated current: | -1.00 A |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 1.30 W |
|
Technical parameters/Leakage source breakdown voltage: | -100 V |
|
Technical parameters/Continuous drain current (Ids): | -1.00 A |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | DIP |
|
Dimensions/Packaging: | DIP |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9120
|
VISHAY | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120
|
Vishay Semiconductor | 类似代替 |
MOSFET P-CH 100V 1A 4-DIP
|
|||
IRFD9120
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9120
|
International Rectifier | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 1A 4-DIP
|
||
IRFD9123PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 1A HEXDIP
|
||
IRFD9123PBF
|
VISHAY | 类似代替 |
MOSFET P-CH 100V 1A HEXDIP
|
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