China National Nuclear Corporation’s (CNNC) China Institute of Atomic Energy has successfully developed the country’s first tandem‑type high‑energy hydrogen ion implanter (POWER‑750H), achieving a stable beam output with core indicators reaching international advanced levels. This breakthrough ends long‑term foreign monopoly in this critical semiconductor equipment sector.
As one of the four core equipment types in chip manufacturing, ion implanters are indispensable for semiconductor production. Often described as a “precision ion cannon” for power devices, the machine accelerates hydrogen ions to ultra‑high energies and precisely implants them deep into semiconductor materials, determining voltage tolerance, switching speed, and reliability in devices like IGBT modules for new‑energy vehicles and third‑generation semiconductors. Previously, China relied entirely on imports for high‑energy hydrogen implanters, with individual units costing over RMB 50 million and facing long lead times and process restrictions, creating a “chokepoint” for upgrading China’s power semiconductor industry.
The achievement stems from cross‑disciplinary innovation. Leveraging decades of expertise in nuclear physics accelerator technology, the institute adopted a “nuclear technology for chip applications” approach. The implanter uses a proprietary two‑stage acceleration structure to deliver a stable 750 keV ion beam with beam current up to 5 mA and implantation uniformity within ±0.5%. Key subsystems such as the high‑brightness ion source and megavolt‑level high‑voltage generator are 100% domestically developed, with overall core component localization reaching 85%. The breakthrough demonstrates full‑chain forward design capability, from underlying principles to complete system integration.
This milestone not only fills the gap in tandem‑type high‑energy implanter equipment domestically but also addresses a crucial link in the power semiconductor manufacturing chain. It is expected to reduce power semiconductor manufacturing costs by 30–40%, is compatible with 12‑inch wafer production lines, and can work synergistically with domestic etching and thin‑film deposition tools. The progress strengthens the foundation for autonomous control of high‑end manufacturing equipment and reinforces industrial‑chain security, while providing strong technical support for achieving “dual‑carbon” goals and cultivating new quality productive forces.
ICgoodFind : The POWER‑750H breakthrough showcases China’s growing capability in high‑end equipment, accelerating the localization of power semiconductors and enhancing the resilience of the industry chain.
