Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 8 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 250 W
Technical parameters/drain source voltage (Vds): -55.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): -75.0 A
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD09P10-195-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD45P03-09-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD45P03-09-GE3
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD50P04-13L-E3
|
Vishay Semiconductor | 功能相似 | TO-252 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUD50P04-13L-E3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUP90P06-09L-E3
|
Vishay Intertechnology | 类似代替 | TO-220-3 |
VISHAY SUP90P06-09L-E3 晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
|
||
SUP90P06-09L-E3
|
VISHAY | 类似代替 | TO-220-3 |
VISHAY SUP90P06-09L-E3 晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
|
||
SUP90P06-09L-E3
|
Vishay Semiconductor | 类似代替 | TO-220 |
VISHAY SUP90P06-09L-E3 晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
|
||
SUP90P06-09L-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
VISHAY SUP90P06-09L-E3 晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review