Technical parameters/dissipated power: | 2.5W (Ta), 32.1W (Tc) |
|
Technical parameters/Input capacitance (Ciss): | 1055pF @50V(Vds) |
|
Technical parameters/dissipated power (Max): | 2.5W (Ta), 32.1W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-252-3 |
|
Dimensions/Packaging: | TO-252-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD45P03-09-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD45P03-09-GE3
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD50P04-13L-E3
|
Vishay Semiconductor | 功能相似 | TO-252 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUD50P04-13L-E3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUP75P05-08-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET P-CH 55V 75A TO220-3
|
||
SUP75P05-08-E3
|
Vishay Semiconductor | 功能相似 | TO-220 |
MOSFET P-CH 55V 75A TO220-3
|
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