Technical parameters/drain source resistance: 8 mΩ
Technical parameters/dissipated power: 3.7W (Ta), 250W (Tc)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Input capacitance (Ciss): 8500pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.7W (Ta), 250W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD09P10-195-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD45P03-09-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD45P03-09-GE3
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD50P04-13L-E3
|
Vishay Semiconductor | 功能相似 | TO-252 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUD50P04-13L-E3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUP90P06-09L-E3
|
Vishay Intertechnology | 类似代替 | TO-220-3 |
VISHAY SUP90P06-09L-E3 晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
|
||
SUP90P06-09L-E3
|
VISHAY | 类似代替 | TO-220-3 |
VISHAY SUP90P06-09L-E3 晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
|
||
SUP90P06-09L-E3
|
Vishay Semiconductor | 类似代替 | TO-220 |
VISHAY SUP90P06-09L-E3 晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
|
||
SUP90P06-09L-E3
|
Vishay Siliconix | 类似代替 | TO-220-3 |
VISHAY SUP90P06-09L-E3 晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
|
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