Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.162 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 8.8A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 1055pF @50V(Vds)
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD45P03-09-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD45P03-09-GE3
|
Vishay Semiconductor | 功能相似 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD50P04-13L-E3
|
Vishay Semiconductor | 功能相似 | TO-252 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUD50P04-13L-E3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUP75P05-08-E3
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET P-CH 55V 75A TO220-3
|
||
SUP75P05-08-E3
|
Vishay Semiconductor | 功能相似 | TO-220 |
MOSFET P-CH 55V 75A TO220-3
|
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