Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 0.0072 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 41.7 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.38 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD09P10-195-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD45P03-10-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
Mosfet p-Ch 30V 15A 3Pin(2+Tab) Dpak
|
||
SUD45P03-10-E3
|
Vishay Intertechnology | 类似代替 | TO-252 |
Mosfet p-Ch 30V 15A 3Pin(2+Tab) Dpak
|
||
SUD45P03-10-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
Mosfet p-Ch 30V 15A 3Pin(2+Tab) Dpak
|
||
SUD45P03-10-E3
|
VISHAY | 类似代替 | TO-252-3 |
Mosfet p-Ch 30V 15A 3Pin(2+Tab) Dpak
|
||
SUD50P04-13L-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUD50P04-13L-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
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