Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single
Other/Case/Package: TO-252
Other/Soft 랜イ동터극동: P-Channel
Other/ハ레イ?동항복압: 30 V
Other/Link Files 레イ류: 15 A
Other/력발산: 4000 mW
Other/저항 Drain Source RDS (on): 0.01 Ohm @ 10 V
Other/Typical 하강: 140 ns
Other/Typical 상승: 375 ns
Other/표준오프い Contact Us: 100 ns
Other/ị동: REEL
Other/게イSoft - ?동항복압: /- 20 V
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
Other/Compare 입: MOSFET
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD45P03-09-GE3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD45P03-09-GE3
|
Vishay Semiconductor | 类似代替 | TO-252-3 |
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
|
||
SUD50P04-13L-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUD50P04-13L-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
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