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Model SUD50P04-13L-E3

Description VISHAY SUD50P04-13L-E3. Field effect transistor, MOSFET, P-channel, -40V, -50A, TO-252-3

Brand: Vishay Semiconductor

Packaging TO-252

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.0105 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	93.7 mW
Technical parameters/Continuous drain current (Ids):	48.0 A
Technical parameters/rise time:	10 ns
Technical parameters/descent time:	20 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	93.7 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.38 mm
Dimensions/Packaging:	TO-252
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

Alternative material

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SUD50P04-08-GE3	Vishay Intertechnology	类似代替	TO-252-3	VISHAY SUD50P04-08-GE3 晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V	PDF
SUD50P04-08-GE3	VISHAY	类似代替	TO-252-3	VISHAY SUD50P04-08-GE3 晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V	PDF
SUD50P04-08-GE3	Vishay Siliconix	类似代替	TO-252-3	VISHAY SUD50P04-08-GE3 晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V	PDF
SUD50P04-13L-GE3	Vishay Semiconductor	类似代替	TO-252	MOSFET 40V 60A 93.7W 13mohm @ 10V	PDF