Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0105 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/drain source voltage (Vds): 30.0 V, -40.0 V
Technical parameters/Continuous drain current (Ids): 11.0 A, 60.0 A, -60.0 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 类似代替 | TO-252-3 |
VISHAY SUD50P04-08-GE3 晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
|
||
SUD50P04-08-GE3
|
VISHAY | 类似代替 | TO-252-3 |
VISHAY SUD50P04-08-GE3 晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
|
||
SUD50P04-08-GE3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
VISHAY SUD50P04-08-GE3 晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
|
||
SUD50P04-13L-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
VISHAY SUD50P04-13L-E3. 场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
|
||
SUD50P04-13L-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
VISHAY SUD50P04-13L-E3. 场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
|
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