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Model SUD45P03-10-E3
Description P Channel MOSFET, 30V to 80V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
Product QR code
Brand: VISHAY
Packaging TO-252-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
5.15  yuan 5.15yuan
10+:
$ 6.1740
100+:
$ 5.8653
500+:
$ 5.6595
1000+:
$ 5.6492
2000+:
$ 5.6081
5000+:
$ 5.5566
7500+:
$ 5.5154
10000+:
$ 5.4949
Quantity
10+
100+
500+
1000+
2000+
Price
$6.1740
$5.8653
$5.6595
$5.6492
$5.6081
Price $ 6.1740 $ 5.8653 $ 5.6595 $ 5.6492 $ 5.6081
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5554) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.01 Ω

Technical parameters/polarity: P-CH

Technical parameters/dissipated power: 70 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 15A

Technical parameters/Input capacitance (Ciss): 6000pF @25V(Vds)

Technical parameters/rated power (Max): 4 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 4 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/length: 6.73 mm

External dimensions/width: 6.22 mm

External dimensions/height: 2.38 mm

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SUD45P03-09-GE3 SUD45P03-09-GE3 Vishay Siliconix 类似代替 TO-252-3
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
PDF
SUD45P03-09-GE3 SUD45P03-09-GE3 Vishay Semiconductor 类似代替 TO-252-3
MOSFET, P-Ch, Vds -30V, Vgs +/- 20V, Rds(on) 15mohm, Id -32A, TO-252, Pd 41.7W
PDF
SUD50P04-13L-E3 SUD50P04-13L-E3 Vishay Semiconductor 类似代替 TO-252
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
PDF
SUD50P04-13L-E3 SUD50P04-13L-E3 Vishay Siliconix 类似代替 TO-252-3
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
PDF

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