Technical parameters/drain source resistance: 0.015 Ω
Technical parameters/dissipated power: 41.7 W
Technical parameters/Input capacitance (Ciss): 2700pF @15V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.1W (Ta), 41.7W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUD09P10-195-GE3
|
Vishay Siliconix | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD09P10-195-GE3
|
VISHAY | 功能相似 | TO-252-3 |
Trans MOSFET P-CH 100V 8.8A 3Pin(2+Tab) DPAK T/R
|
||
SUD45P03-10-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
Mosfet p-Ch 30V 15A 3Pin(2+Tab) Dpak
|
||
SUD45P03-10-E3
|
Vishay Intertechnology | 类似代替 | TO-252 |
Mosfet p-Ch 30V 15A 3Pin(2+Tab) Dpak
|
||
SUD45P03-10-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
Mosfet p-Ch 30V 15A 3Pin(2+Tab) Dpak
|
||
SUD45P03-10-E3
|
VISHAY | 类似代替 | TO-252-3 |
Mosfet p-Ch 30V 15A 3Pin(2+Tab) Dpak
|
||
SUD50P04-13L-E3
|
Vishay Semiconductor | 类似代替 | TO-252 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
||
SUD50P04-13L-E3
|
Vishay Siliconix | 类似代替 | TO-252-3 |
MOSFET, Power; P-Ch; VDSS -40V; RDS(ON) 0.0105Ω; ID -60A; TO-252; PD 93.7W; VGS +/-20
|
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