Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 18 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.3 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 6.00 A
Technical parameters/rise time: 10 ns
Technical parameters/rated power (Max): 1.7 W
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.3 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7855PBF
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International Rectifier | 功能相似 | SOIC-8 |
N 通道功率 MOSFET 8A 至 12A，Infineon Infineon 系列分离式 HEXFET® 功率 MOSFET 包括 N 通道设备，采用表面安装和引线封装。 形状系数可解决大多数板布局和热设计挑战问题。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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SI4470EY-T1-E3
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Vishay Intertechnology | 类似代替 | SOIC |
MOSFET N-CH 60V 9A 8-SOIC
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SI4470EY-T1-E3
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VISHAY | 类似代替 | SOIC-8 |
MOSFET N-CH 60V 9A 8-SOIC
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SI4850EY-T1
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Vishay Semiconductor | 类似代替 | SOIC |
MOSFET N-CH 60V 6A 8-SOIC
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SI4850EY-T1
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Vishay Siliconix | 类似代替 | SO-8 |
MOSFET N-CH 60V 6A 8-SOIC
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SI4850EY-T1
|
VISHAY | 类似代替 | SOIC |
MOSFET N-CH 60V 6A 8-SOIC
|
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SI4850EY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ω; ID 6A; SO-8; PD 1.7W; VGS +/-20V; gFS 2
|
||
|
SI4850EY-T1-E3
|
Vishay Intertechnology | 类似代替 | SOIC-8 |
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.018Ω; ID 6A; SO-8; PD 1.7W; VGS +/-20V; gFS 2
|
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