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Model SI4850EY-T1
Description MOSFET N-CH 60V 6A 8-SOIC
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Brand: Vishay Siliconix
Packaging SO-8
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3225) Minimum order quantity(1)
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Technical parameters/dissipated power: 1.7W (Ta)

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/dissipated power (Max): 1.7W (Ta)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SO-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4850EY-T1-GE3 SI4850EY-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SI4850EY-T1-GE3 MOSFET Transistor, N Channel, 6A, 60V, 18mohm, 10V, 3V
PDF
SI4850EY-T1-GE3 SI4850EY-T1-GE3 VISHAY 类似代替 SOIC-8
VISHAY SI4850EY-T1-GE3 MOSFET Transistor, N Channel, 6A, 60V, 18mohm, 10V, 3V
PDF

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