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Model SI4850EY-T1
Description NChannel reduced Qg, fast switching MOSFET N-Channel reduced Qg, fast switching MOSFET
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Brand: Vishay Semiconductor
Packaging SOIC
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4622) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/forward voltage: 800 mV

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 1.70 W

Technical parameters/leakage source breakdown voltage: 60.0V (min)

Technical parameters/rise time: 10 ns

Technical parameters/descent time: 12 ns

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 175℃

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4850EY-T1-GE3 SI4850EY-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SI4850EY-T1-GE3 MOSFET Transistor, N Channel, 6A, 60V, 18mohm, 10V, 3V
PDF
SI4850EY-T1-GE3 SI4850EY-T1-GE3 VISHAY 类似代替 SOIC-8
VISHAY SI4850EY-T1-GE3 MOSFET Transistor, N Channel, 6A, 60V, 18mohm, 10V, 3V
PDF

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