Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 9A
Technical parameters/rise time: 12 ns
Technical parameters/rated power (Max): 1.85 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3750 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4850EY-T1-GE3
|
Vishay Siliconix | 功能相似 | SO-8 |
VISHAY SI4850EY-T1-GE3 MOSFET Transistor, N Channel, 6A, 60V, 18mohm, 10V, 3V
|
||
SI4850EY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SI4850EY-T1-GE3 MOSFET Transistor, N Channel, 6A, 60V, 18mohm, 10V, 3V
|
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