Technical parameters/rated power: 2 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 550 mW
Technical parameters/rise time: 60 ns
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 150 @500mA, 5V
Technical parameters/rated power (Max): 2 W
Technical parameters/DC current gain (hFE): 150
Technical parameters/descent time: 120 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, automotive, lighting, signal processing, motor drive and control, power management, communication and networking
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX84-C18,215
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Nexperia | 功能相似 | SOT-23-3 |
Nexperia BZX84-C18,215 单路 齐纳二极管, 18V 5% 250 mW, 3引脚 SOT-23 (TO-236AB)封装
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BZX84-C18,215
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NXP | 功能相似 | SOT-23-3 |
Nexperia BZX84-C18,215 单路 齐纳二极管, 18V 5% 250 mW, 3引脚 SOT-23 (TO-236AB)封装
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PBSS9110X
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NXP | 功能相似 | SOT-89 |
PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
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PBSS9110X
|
Nexperia | 功能相似 | UPAK |
PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
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PBSS9110Z
|
NXP | 功能相似 | SOT-223 |
100V, 1A PNP low VCEsat (BISS) transistor
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PBSS9110Z
|
Philips | 功能相似 |
100V, 1A PNP low VCEsat (BISS) transistor
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PBSS9110Z,135
|
Nexperia | 功能相似 | TO-261-4 |
Nexperia PBSS9110Z,135 , PNP 晶体管, 1 A, Vce=100 V, HFE:125, 100 MHz, 4引脚 SOT-223 (SC-73)封装
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||
PBSS9110Z,135
|
NXP | 功能相似 | TO-261-4 |
Nexperia PBSS9110Z,135 , PNP 晶体管, 1 A, Vce=100 V, HFE:125, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
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