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Model PBSS9110Z

Description NXP PBSS9110Z Single transistor bipolar, PNP, 100 V, 650 mW, 1 A, 150 hFE

Brand: NXP

Packaging SOT-223

Delivery time

Packaging method Cut Tape (CT)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(7014) Minimum order quantity(1)

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Technical parameters/number of pins:	4
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	650 mW
Technical parameters/breakdown voltage (collector emitter):	100 V
Technical parameters/Maximum allowable collector current:	1A
Technical parameters/minimum current amplification factor (hFE):	125
Technical parameters/DC current gain (hFE):	150
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	1.4 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	4
Encapsulation parameters/Encapsulation:	SOT-223
Dimensions/Length:	6.7 mm
Dimensions/Width:	3.7 mm
Dimensions/Height:	1.7 mm
Dimensions/Packaging:	SOT-223
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Cut Tape (CT)
Other/Manufacturing Applications:	Power Management, Automotive, Industrial, Signal Processing, Motor Drive & Control
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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