Technical parameters/number of pins: 4
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 650 mW
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 150 @500mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 150 @1mA, 5V
Technical parameters/rated power (Max): 1.4 W
Technical parameters/DC current gain (hFE): 150
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS9110Z
|
NXP | 功能相似 | SOT-223 |
NXP PBSS9110Z 单晶体管 双极, PNP, 100 V, 650 mW, 1 A, 150 hFE
|
||
PBSS9110Z
|
Philips | 功能相似 |
NXP PBSS9110Z 单晶体管 双极, PNP, 100 V, 650 mW, 1 A, 150 hFE
|
|||
PBSS9110Z,135
|
Nexperia | 功能相似 | TO-261-4 |
Nexperia PBSS9110Z,135 , PNP 晶体管, 1 A, Vce=100 V, HFE:125, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
||
PBSS9110Z,135
|
NXP | 功能相似 | TO-261-4 |
Nexperia PBSS9110Z,135 , PNP 晶体管, 1 A, Vce=100 V, HFE:125, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
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