Technical parameters/rated power: | 1.4 W |
|
Technical parameters/number of pins: | 4 |
|
Technical parameters/dissipated power: | 650 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 100 V |
|
Technical parameters/minimum current amplification factor (hFE): | 150 @500mA, 5V |
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Technical parameters/rated power (Max): | 1.4 W |
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Technical parameters/DC current gain (hFE): | 150 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 1.4 W |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-261-4 |
|
Dimensions/Length: | 6.7 mm |
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Dimensions/Width: | 3.7 mm |
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Dimensions/Height: | 1.7 mm |
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Dimensions/Packaging: | TO-261-4 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Motor drive and control, signal processing, power management, industrial, automotive applications |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS9110Z
|
NXP | 功能相似 | SOT-223 |
NXP PBSS9110Z 单晶体管 双极, PNP, 100 V, 650 mW, 1 A, 150 hFE
|
||
PBSS9110Z
|
Philips | 功能相似 |
NXP PBSS9110Z 单晶体管 双极, PNP, 100 V, 650 mW, 1 A, 150 hFE
|
|||
PBSS9110Z,135
|
Nexperia | 功能相似 | TO-261-4 |
Nexperia PBSS9110Z,135 , PNP 晶体管, 1 A, Vce=100 V, HFE:125, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
||
PBSS9110Z,135
|
NXP | 功能相似 | TO-261-4 |
Nexperia PBSS9110Z,135 , PNP 晶体管, 1 A, Vce=100 V, HFE:125, 100 MHz, 4引脚 SOT-223 (SC-73)封装
|
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