Technical parameters/minimum current amplification factor (hFE): 125
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: UPAK
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: UPAK
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS9110X,135
|
NXP | 功能相似 | SOT-89-3 |
NXP PBSS9110X,135 单晶体管 双极, PNP, -100 V, 100 MHz, 550 mW, -1 A, 150 hFE
|
||
PBSS9110X,135
|
Nexperia | 功能相似 | SOT-89-3 |
NXP PBSS9110X,135 单晶体管 双极, PNP, -100 V, 100 MHz, 550 mW, -1 A, 150 hFE
|
||
PBSS9110Z
|
NXP | 功能相似 | SOT-223 |
100V, 1A PNP low VCEsat (BISS) transistor
|
||
PBSS9110Z
|
Philips | 功能相似 |
100V, 1A PNP low VCEsat (BISS) transistor
|
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