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Model PBSS9110X
Description PNP Transistors, NXP series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, NXP Semiconductors
Product QR code
Brand: NXP
Packaging SOT-89
Delivery time
Packaging method
Standard packaging quantity 1
0.47  yuan 0.47yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4732) Minimum order quantity(1)
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Technical parameters/polarity:

PNP

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/Maximum allowable collector current:

1A

 

Technical parameters/minimum current amplification factor (hFE):

125

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

2 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SOT-89

 

Dimensions/Length:

4.6 mm

 

Dimensions/Width:

2.6 mm

 

Dimensions/Height:

1.6 mm

 

Dimensions/Packaging:

SOT-89

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS9110X,135 PBSS9110X,135 NXP 功能相似 SOT-89-3
NXP PBSS9110X,135 单晶体管 双极, PNP, -100 V, 100 MHz, 550 mW, -1 A, 150 hFE
PDF
PBSS9110X,135 PBSS9110X,135 Nexperia 功能相似 SOT-89-3
NXP PBSS9110X,135 单晶体管 双极, PNP, -100 V, 100 MHz, 550 mW, -1 A, 150 hFE
PDF
PBSS9110Z PBSS9110Z NXP 功能相似 SOT-223
100V, 1A PNP low VCEsat (BISS) transistor
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PBSS9110Z PBSS9110Z Philips 功能相似
100V, 1A PNP low VCEsat (BISS) transistor
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