Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.90 W
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/Continuous drain current (Ids): 4.90 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2304DDS-T1-GE3
|
VISHAY | 功能相似 | SOT-23-3 |
30V,3.6A,0.06Ω,N沟道功率MOSFET
|
||
SI2304DDS-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
30V,3.6A,0.06Ω,N沟道功率MOSFET
|
||
SI2304DDS-T1-GE3
|
Vishay Semiconductor | 功能相似 | TO-236 |
30V,3.6A,0.06Ω,N沟道功率MOSFET
|
||
SI2304DDS-T1-GE3
|
Vishay Intertechnology | 功能相似 | TO-236 |
30V,3.6A,0.06Ω,N沟道功率MOSFET
|
||
SI2306BDS-T1-E3
|
VISHAY | 功能相似 | SOT-23-3 |
N通道30 -V (D -S )的MOSFET N-Channel 30-V (D-S) MOSFET
|
||
SI2306BDS-T1-E3
|
Vishay Intertechnology | 功能相似 | SOT-23-3 |
N通道30 -V (D -S )的MOSFET N-Channel 30-V (D-S) MOSFET
|
||
SI2306BDS-T1-E3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
N通道30 -V (D -S )的MOSFET N-Channel 30-V (D-S) MOSFET
|
||
SI2306BDS-T1-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
N通道30 -V (D -S )的MOSFET N-Channel 30-V (D-S) MOSFET
|
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